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2N7000G
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate ? Body Leakage Current, Forward
(V GS = 0, I D = 10 m Adc)
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 ° C)
(V GSF = 15 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSSF
60
?
?
?
?
1.0
1.0
? 10
Vdc
m Adc
mAdc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain ? Source On ? Resistance
Drain ? Source On ? Voltage
On ? State Drain Current
Forward Transconductance
(V DS = V GS , I D = 1.0 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 4.5 Vdc, I D = 75 mAdc)
(V GS = 4.5 Vdc, V DS = 10 Vdc)
(V DS = 10 Vdc, I D = 200 mAdc)
V GS(th)
r DS(on)
V DS(on)
I d(on)
g fs
0.8
?
?
?
?
75
100
3.0
5.0
6.0
2.5
0.45
?
?
Vdc
W
Vdc
mAdc
m mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
60
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
C oss
C rss
?
?
25
5.0
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 15 V, I D = 500 mA,
R G = 25 W , R L = 30 W , V gen = 10 V)
t on
t off
?
?
10
10
ns
1. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
2N7000G
2N7000RLRAG
Device
Package
TO ? 92
(Pb ? Free)
TO ? 92
(Pb ? Free)
Shipping ?
1000 Units / Bulk
2000 Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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相关代理商/技术参数
2N7000RLRAG
功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7000RLRMG
功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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2N7000RLRPG
功能描述:MOSFET 60V 200mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2N7000T/R
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